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HCS125MS
September 1995
Radiation Hardened Quad Buffer, Three-State
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14, LEAD FINISH C TOP VIEW
OE1 1 A1 2 Y1 3 OE2 4 A2 5 Y2 6 GND 7 14 VCC 13 OE4 12 A4 11 Y4 10 OE3 9 A3 8 Y3
Features
* * * * * * * * * * * 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose Rate Upset >1010 RAD (Si)/s, 20ns Pulse Latch-Up Free Under Any Conditions Military Temperature Range: -55oC to +125oC Significant Power Reduction Compared to LSTTL ICs DC Operating Voltage Range: 4.5V to 5.5V Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min Input Current Levels Ii 5A at VOL, VOH
*
Description
The Intersil HCS125MS is a Radiation Hardened quad three-state buffer, each having its own output enable input. A high level on the enable input puts the output in a high impedance state. The HCS125MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS125MS is supplied in a 14 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).
OE1 A1 Y1 OE2 A2 Y2 GND
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP3-F14, LEAD FINISH C TOP VIEW
1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC OE4 A4 Y4 OE3 A3 Y3
Ordering Information
PART NUMBER HCS125DMSR TEMPERATURE RANGE -55oC to +125oC SCREENING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent Sample PACKAGE
Functional Diagram
An P n Yn
14 Lead SBDIP
OEn
HCS125KMSR
-55oC to +125oC
14 Lead Ceramic Flatpack 14 Lead SBDIP TRUTH TABLE INPUTS An H L X OEn L L H OUTPUT Yn H L Z
HCS125D/ Sample HCS125K/ Sample HCS125HMSR
+25oC
+25oC
Sample
14 Lead Ceramic Flatpack Die
+25oC
Die
L = Low, H = High, X = Don't Care, Z = High Impedance
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
Spec Number File Number
123
518831 3559.1
Specifications HCS125MS
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .35mA Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (All Voltage Reference to the VSS Terminal)
Reliability Information
Thermal Resistance JA JC SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/oC Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Gates
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Time at 4.5V VCC (tr, tf) . . . . . . . 100ns/V Max. Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . VCC to 70% of VCC Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2, 3 Output Current (Source) IOH VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V, (Note 2) VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V, (Note 2) VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOH = -50A VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOH = -50A Output Voltage Low VOL VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOL = 50A VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOL = 50A Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND 1 2, 3 1 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC MIN -7.2 -6.0 7.2 6.0 VCC -0.1 VCC -0.1 MAX 40 750 UNITS A A mA mA mA mA V
PARAMETER Supply Current
SYMBOL ICC
(NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND
Output Current (Sink)
IOL
Output Voltage High
VOH
1, 2, 3
+25oC, +125oC, -55oC
-
V
1, 2, 3
+25oC, +125oC, -55oC
0.1
V
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
1 2, 3
+25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC
-
0.5 5.0 1.0 50 -
A A A A V
Three-State Output Leakage Current
IOZ
VCC = 5.5V, Force Voltage = 0V or VCC
1 2, 3
Noise Immunity Functional Test NOTES:
FN
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, (Note 3)
7, 8A, 8B
1. All voltages reference to device GND. 2. Force/Measure functions may be interchanged. 3. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
Spec Number 124
518831
Specifications HCS125MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 9 10, 11 Enable Delay OE toY TPZL TPZH VCC = 4.5V, VIH = 4.5V, VIL = 0V 9 10, 11 Disable Delay OE toY TPLZ TPHZ VCC = 4.5V, VIH = 4.5V, VIL = 0V 9 10, 11 NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns. LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN 2 2 2 2 2 2 MAX 21 25 25 30 25 30 UNITS ns ns ns ns ns ns
PARAMETER Propagation Delay Input to Y
SYMBOL TPHL TPLH
(NOTES 1, 2) CONDITIONS VCC = 4.5V, VIH = 4.5V, VIL = 0V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation SYMBOL CPD CONDITIONS VCC = 5.0V, VIH = 5.0V, VIL = 0V, f = 1MHz NOTES 1 1 Input Capacitance CIN VCC = 5.0V, VIH = 5.0V, VIL = 0V, f = 1MHz 1 1 Output Capacitance COUT VCC = 5.0V, VIH = 5.0V, VIL = 0V, f = 1MHz 1 1 Output Transition Time TTHL TTLH VCC = 4.5V, VIH = 4.5V, VIL = 0V 1 1 NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN 1 1 1 1 MAX 60 90 10 10 20 20 15 22 UNITS pF pF pF pF pF pF ns ns
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS PARAMETER Supply Current Output Current (Source) Output Current (Sink) SYMBOL ICC IOH (NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0 VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0 TEMPERATURE +25oC +25oC MIN -6.0 MAX 0.75 UNITS mA mA
IOL
+25oC
6.0
-
mA
Spec Number 125
518831
Specifications HCS125MS
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) 200K RAD LIMITS PARAMETER Output Voltage High SYMBOL VOH (NOTE 1) CONDITIONS VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOH = -50A VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOH = -50A Output Voltage Low VOL VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOL = 50A VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOL = 50A Input Leakage Current Three-State Output Leakage Current Noise Immunity Functional Test Propagation Delay Input to Y Enable Delay OE to Y Disable Delay OE to Y IIN IOZ VCC = 5.5V, VIN = VCC or GND VCC = 5.5V, Force Voltage = 0V or VCC VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, (Note 2) VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V TEMPERATURE +25oC MIN VCC -0.1 VCC -0.1 MAX UNITS V
+25oC
-
V
+25oC
0.1
V
+25oC
-
0.1
V
+25oC +25oC
-
5 50
A A
FN
+25oC
-
-
V
TPHL TPLH TPZL TPZH TPLZ TPHZ
+25oC
2
25
ns
+25oC
2
30
ns
+25oC
2
30
ns
NOTES: 1. All voltages referenced to device GND. 2. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP 5 5 5
PARAMETER ICC IOL/IOH IOZ
DELTA LIMIT +12A -15% of 0 Hour 200nA
Spec Number 126
518831
Specifications HCS125MS
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate group A testing in accordance with Method 5005 of Mil-Std-883 may be exercised. METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 7, 9 Subgroups 1, 2, 3, 9, 10, 11 ICC, IOL/H, IOZL/H READ AND RECORD ICC, IOL/H, IOZL/H ICC, IOL/H, IOZL/H ICC, IOL/H, IOZL/H
TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 NOTE: 1. Except FN test which will be performed 100% go/no-go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN STATIC I BURN-IN (Note 1) 3, 6, 8, 11 STATIC II BURN-IN (Note 1) 3, 6, 8, 11 DYNAMIC BURN-IN (Note 2) NOTES: 1. Each pin except VCC and GND will have a series resistor of 10K 5%. 2. Each pin except VCC and GND will have a series resistor of 1K 5%. 7 3, 6, 8, 11 14 1, 2, 4, 5, 9, 10, 12, 13 7 1, 2, 4, 5, 9, 10, 12, 13, 14 1, 2, 4, 5, 7, 9, 10, 12, 13 14 GROUND 1/2 VCC = 3V 0.5V VCC = 6V 0.5V 50kHz 25kHz TEST METHOD 5005 PRE RAD 1, 7, 9 POST RAD Table 4 READ AND RECORD PRE RAD 1, 9 POST RAD Table 4 (Note 1)
TABLE 9. IRRADIATION TEST CONNECTIONS OPEN 3, 6, 8, 11 GROUND 7 VCC = 5V 0.5V 1, 2, 4, 5, 9, 10, 12, 13, 14
NOTE: Each pin except VCC and GND will have a resistor of 47K 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 127
518831
HCS125MS Intersil Space Level Product Flow - `MS'
Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method 2011 Sample - Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition A 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (Notes 1and 2) 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 3) 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5)
NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: * Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). * Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. * GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. * X-Ray report and film. Includes penetrometer measurements. * Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). * Lot Serial Number Sheet (Good units serial number and lot number). * Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. * The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative.
Spec Number 128
518831
HCS125MS Propagation Delay Timing Diagram
VIH VS VSS TPLH TPHL VOH VS VOL OUTPUT CL RL CL = 50pF RL = 500 INPUT
Propagation Delay Load Circuit
DUT TEST POINT
Transition Timing Diagram
VOH TTLH 80% VOL 20% 80% 20% TTHL
OUTPUT
VOLTAGE LEVELS PARAMETER VCC VIH VS VIL GND HCS 4.50 4.50 2.25 0 0 UNITS V V V V V
Three-State High Timing Diagrams
VIH VS VSS TPZH TPHZ VOH VT VOZ OUTPUT VW INPUT
Three-State High Load Circuit
DUT TEST POINT
CL
RL
CL = 50pF RL = 500
THREE-STATE HIGH VOLTAGE LEVELS PARAMETER VCC VIH VS VT VW GND HCS 4.50 4.50 2.25 2.25 3.60 0 UNITS V V V V V V
Spec Number 129
518831
HCS125MS Three-State Low Timing Diagrams
VIH VS VSS TPZL TPLZ VOZ VT VOL CL CL = 50pF OUTPUT VW DUT TEST POINT RL INPUT
Three-State Low Load Circuit
VCC
THREE-STATE LOW VOLTAGE LEVELS PARAMETER VCC VIH VS VT VW GND HCS 4.50 4.50 2.25 2.25 0.90 0 UNITS V V V V V V
RL = 500
Spec Number 130
518831
HCS125MS Die Characteristics
DIE DIMENSIONS: 92 x 91(mils) 2.34 x 2.31 (mm) METALLIZATION: Type: AlSi Thickness: 11kA 1kA GLASSIVATION: Type: SiO2 Thickness: 13kA 2.6kA WORST CASE CURRENT DENSITY: <2.0 x 105 A/cm2 BOND PAD SIZE: 4 x 4 (mils) 100 x 100 (m)
Metallization Mask Layout
HCS125MS
(14) VCC (13) OE4 (1) OE1
(2) A1
Y1 (3)
(12) A4
OE2 (4) (11) Y4
A2 (5)
(10) OE3
GND (7)
Y2 (6)
Y3 (8)
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
A3 (9)
Spec Number 131
518831

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